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ABB 5SHY35L4510 3BHE014105R0001
ABB 5SHY35L4510 (3BHE014105R0001) is a high-power Asymmetric Integrated Gate-Commutated Thyristor (IGCT) module developed by ABB Semiconductors. It is designed for high-voltage, high-current power conversion systems, combining the low conduction losses of thyristors with the fast switching capability of transistor technologies.
This IGCT is widely used in ABB medium-voltage drive platforms such as ACS6000 and other high-power converter systems.
2. Technical Parameters
| Parameter |
Specification |
| Manufacturer |
ABB |
| Part Number |
5SHY35L4510 |
| ABB Order Code |
3BHE014105R0001 |
| Device Type |
Asymmetric IGCT (Integrated Gate-Commutated Thyristor) |
| Technology |
IGCT power semiconductor |
| Voltage Class |
Approx. 4500 V |
| Average On-State Current |
1700 A (half sine wave, Tc = 85°C) |
| RMS On-State Current |
Approx. 2670 A |
| Surge Current Capability |
Up to 32 kA (non-repetitive) |
| On-State Voltage |
Approx. 2.7 V at 4000 A, Tj = 125°C |
| Package Type |
Press-pack power semiconductor module |
| Gate Drive |
Integrated gate unit with fiber-optic interface |
3. Product Features
High Voltage & High Current Capability
The 5SHY35L4510 is designed for demanding industrial power applications requiring large current handling and high blocking voltage capability.
Low Conduction Loss
IGCT technology provides a low forward voltage drop compared with conventional switching devices, improving converter efficiency and reducing heat generation.
Fast Switching Performance
The integrated gate structure enables fast turn-on and turn-off operation, making it suitable for medium-voltage inverter applications.
Integrated Gate Drive
The device integrates gate drive functions, optical command input, and status feedback, simplifying system design and improving operational reliability.
High Reliability Design
The press-pack structure provides good thermal performance, mechanical strength, and suitability for industrial environments.
4. Structural Composition
The ABB 5SHY35L4510 IGCT module mainly consists of:
- IGCT semiconductor chip
- Main power switching element
- Combines GTO thyristor structure with integrated gate control
- Gate Unit Assembly
- Turn-on / turn-off driver circuits
- Optical communication interface
- Monitoring and protection circuits
- Press-Pack Housing
- High-pressure contact structure
- Double-sided cooling capability
- Electrical Terminals
- Anode
- Cathode
- Gate/control interface
5. Application Fields
Medium Voltage Drives
Used in ABB high-power motor drives for:
- Mining equipment
- Oil & gas compressors
- Rolling mills
- Large pumps and fans
Power Conversion Systems
Applied in:
- High-voltage inverters
- Industrial converters
- Active rectifier units (ARU)
- Energy conversion equipment
Renewable Energy Systems
Suitable for:
- Wind power converters
- Grid-connected power conversion
- Energy storage power systems
Power Grid Applications
Used in:
- Static VAR compensation (SVC)
- Grid stabilization equipment
- High-power switching systems
6. Advantages
- High power density
- Excellent thermal performance
- Low switching losses
- High overload capability
- Long service life
- Suitable for harsh industrial environments
- Compatible with ABB ACS6000 / PCS6000-class converter systems
7. Conclusion
The ABB 5SHY35L4510 (3BHE014105R0001) is a high-performance 4500 V class IGCT power semiconductor module designed for demanding medium-voltage and high-power conversion applications. With its combination of high current capability, low losses, integrated gate control, and robust press-pack construction, it remains an important component in ABB industrial drive and power conversion systems.